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IRFB4229PBF_15 Datasheet, PDF (6/8 Pages) International Rectifier – Advanced Process Technology | |||
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IRFB4229PbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
Â
-
Â
RG
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
Reverse
-Â +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
*
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
Re-Applied
** + Voltage
Body Diode Forward Drop
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Inductor Curent
Ripple ⤠5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01â¦
+
- VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Vds
Vgs(th)
Id
Vgs
Fig 20a. Gate Charge Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6
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