IRFB3507 Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB3507/IRFS3507/IRFSL3507
4.5
4.0
3.5
3.0
ID = 100µA
2.5
ID = 250µA
ID = 1.0mA
2.0
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
14
12
10
8
6
4
IF = 39A
VR = 64V
2
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
300
14
12
10
8
6
4
IF = 19A
VR = 64V
2
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
350
300
250
200
150
100
50
IF = 19A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
250
200
150
100
IF = 39A
50
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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