IRF830A Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF830A
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
I_{A S}
0 .0 1Ω
+
- ^VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V _(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP
2.2A
3.2A
400
BOTTOM 5.0A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
790
785
780
775
770
0.0
1.0
2.0
3.0
4.0
I _av , A valanc he Current (A)
A
5.0
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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