IRF7N1405 Datasheet, PDF (6/7 Pages) International Rectifier – HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)

IRF7N1405
15V
VDS
L
RG
2V0 VGS
tp
D .U .T.
I_{A S}
0 .0 1Ω
D R IV E R
+
- ^VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
10V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig 13a. Basic Gate Charge Waveform
6
500
 ^TOP
ID
24.6A
34.8A
400
BOTTOM 55A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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