IRF7835PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7835PbF
16
ID = 15A
12
8
TJ = 125°C
4
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 14a. Unclamped Inductive Test Circuit
L_D
V_DS
+
V_DD -
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 15a. Switching Time Test Circuit
6
500
ID
TOP
1.4A
400
1.8A
BOTTOM 15A
300
200
100
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V_(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 15b. Switching Time Waveforms
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