IRF7811APBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7811APbF
0.013
0.03
0.011
0.009
0.007
VGS = 4.5V
0.02
VGS = 10V
0.01
ID = 9.0A
0.005
0
10 20 30 40 50 60
ID , Drain Current (A)
0.00
2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 14. Basic Gate Charge Test Circuit
Fig 13. On-Resistance Vs. Gate Voltage
140
I_D
TOP
4.0A
120
7.2A
BOTTOM 9.0A
100
80
60
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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