IRF7495PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET®Power MOSFET

IRF7495PbF
25
50
20
VGS = 10V
15
40
30
20
ID = 4.4A
10
0
10 20 30 40 50 60 70
ID , Drain Current (A)
Fig 12. On-Resistance vs. Drain Current
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
L
V_GS
Q_G
VCC
DUT
Q_GS
Q_GD
0
1K
V_G
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
500
ID
TOP 2.0A
400
3.5A
BOTTOM 4.4A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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