IRF7494TRPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET

Power MOSFET

IRF7494PbF
50
45
Vgs = 10V
40
35
30
0 5 10 15 20 25 30 35 40 45
ID, Drain Current (A)
Fig 12. On-Resistance vs. Drain Current
100
90
ID = 5.1A
80
TJ = 125°C
70
60
50
40
TJ = 25°C
30
20
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
L
V_GS
Q_G
VCC
DUT
Q_GS
Q_GD
0
1K
V_G
700
600
Charge
500
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
400
300
ID
TOP 1.4A
2.5A
BOTTOM 3.1A
V(BR)DSS
tp
VDS
L
15V
DRIVER
200
100
RG
20V
D.U.T
I_AS
+
-
VDD
A
0
25
50
75
100 125 150
I AS
tp
0.01Ω
Starting TJ , Junction Temperature (°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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