IRF7494 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7494
50
45
VGS = 10V
40
35
30
0
5 10 15 20 25 30 35 40 45
ID , Drain Current (A)
800
700
600
500
400
ID = 5.2A
300
200
100
0
4
6
8
10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 13. On-Resistance vs. Gate Voltage
1000
800
600
ID
TOP 1.3A
2.6A
BOTTOM 3.1A
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
400
200
0
25
50
75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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