AUIRFR8403 Datasheet, PDF (6/13 Pages) International Rectifier – Advanced Process Technology, New Ultra Low On-Resistance

8.0
ID = 76A
6.0
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
6
IF = 51A
5 ^{VR = 34V}
TJ = 25°C
4 ^{TJ = 125°C}
3
2
1
0
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
6
IF = 76A
5 ^{VR = 34V}
TJ = 25°C
4 ^{TJ = 125°C}
3
2
1
0
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. di_f/dt
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AUIRFR/U8403
4.5
4.0
3.5
3.0
2.5
ID = 100μA
2.0
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75
-25 25 75 125 175 225
TJ , Temperature ( °C )
Fig 17. Threshold Voltage vs. Temperature
90
IF = 51A
80 _{VR = 34V}
70 ^{TJ = 25°C}
TJ = 125°C
60
50
40
30
20
10
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
80
IF = 76A
VR = 34V
60 ^{TJ = 25°C}
TJ = 125°C
40
20
0
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. di_f/dt
April 25, 2013