AUIRF7640S2 Datasheet, PDF (6/11 Pages) International Rectifier – DirectFETPower MOSFET 

AUIRF7640S2TR/TR1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
DC
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 13. Maximum Safe Operating Area
10
160
ID
140
TOP
2.5A
4.8A
120
BOTTOM 13A
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R_1R1
R_2R2
R_3R3
R_4R4
Ri (°C/W) τi (sec)
0.49687 0.000119
τ_{J τJ}
τ_{1 τ1}
τ_{Cτ 0.00517 8.231486}
τ_{2 τ2}
τ_{3 τ3}
τ_4τ4
2.55852 0.018926
Ci= τi/Ri
Ci i/Ri
1.94004 0.002741
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
10
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
1.0E-01
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