AUIRF3007 Datasheet, PDF (6/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF3007
80
LIMITED BY PACKAGE
60
40
20
0
25
50
75
100
125
150
175
T_C, Case Temperature
( ^°C)
3.0
I_D = 80A
2.5
2.0
1.5
1.0
0.5
V _GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
P _DM
SINGLE PULSE
(THERMAL RESPONSE)
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.0001
0.001
0.01
0.1
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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