ST2100C Datasheet, PDF (5/6 Pages) International Rectifier – PHASE CONTROL THYRISTORS Hockey Puk Version

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ST2100C..R Series
Blocking
Parameter
dv/dt
I_RRM
I_DRM
Maximum linear rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST2100C..R
500
250
Units Conditions
V/µs T_J = T_J max. to 67% rated V_DRM
mA T_J = 125°C rated V_DRM/V_RRM applied
Triggering
Parameter
P_GM Maximum peak gate power
P_G(AV) Maximum average gate power
I_GM Max. peak positive gate current
V_GM Max. peak positive gate voltage
-V_GM Max. peak negative gate voltage
I_GT
Maximum DC gate current
required to trigger
V_GT Maximum gate voltage required
to trigger
V_GD DC gate voltage not to trigger
ST2100C..R
150
10
30
30
0.25
400
4
0.25
Units Conditions
W
t_p = 100µs
A Anode positive with respect to cathode
V Anode positive with respect to cathode
V Anode positive with respect to cathode
mA T_C = 25°C, V_DRM = 5V
V T_C = 25°C, V_DRM = 5V
23
V T_C = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V_DRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST2100C..R Units Conditions
T_J max. Max. operating temperature
T_stg Max. storage temperature range
R_thJ-C Thermal resistance, junction
to case
R_th(C-h) Thermal resistance, case
to heatsink
F
Mounting force ± 10%
wt
Approximate weight
125
-55 to 125
0.019
0.0095
0.004
0.002
43000
(4400)
1600
On-state (conducting)
°C
K/W
K/W
N
(Kg)
g
DC operation single side cooled
DC operation double side cooled
Single side cooled Clamping force 43KN with
Double side cooled mounting compound
Case style
(R-PUK)
See Outline Table
∆R_thJ-C Conduction
(The following table shows the increment of thermal resistence R_thJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units Conditions
180°
120°
0.0010
0.0017
0.0010
0.0017
K/W
T_J = T_J max.
60°
0.0044
0.0044
D-4153333
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