RIC7S113E4_15 Datasheet, PDF (5/9 Pages) International Rectifier – RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Radiation characteristics
RIC7S113E4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated in Table and Curve
below. For Static Bias Test Conditions refer to Figure 8.
Single Event Effect Safe Operating Area
Ion
LET
Energy
(MeV/(mg/cm²)) (MeV)
Kr
27.2
1089
Xe
50.4
1618
Range
(µm)
143
128.7
VCC/VDD
20V
20V
VB = 10V
400
300
VS (V)
VB = 15V
400
175
VB = 17.5V
375
125
Static Bias
450
400
350
300
250
Kr
200
150
Xe
100
50
0
7.5
10 12.5 15 17.5 20
Bias VB (V)
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