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OM55N10SC_15 Datasheet, PDF (5/8 Pages) International Rectifier – Isolated Hermetic Metal Packages
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OM75N06SA (TC = 25°C unless otherwise specified)
Avalanche Characteristics
Min.
IAR
Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR
Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
60
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
2
RDS(on) Static Drain-Source On
Resistance
ID(on) On State Drain Current
75
Electrical Characteristics - Dynamic
gfs
Forward Transconductance
25
Cies
Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr
Rise Time
(di/dt)on Turn-On Current Slope
Qg
Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf
Fall Time
tcross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD
Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
70 A
900 mJ
200 mJ
40 A
V
250 µA
1000 µA
±100 nA
4V
0.018
0.036
A
S
4100
pF
1800
pF
420
pF
190
nS
900
nS
150
A/µS
130
nC
360
nS
280
nS
600
nS
75 A
300 A
1.5 V
120
nS
0.45
µC
6.5
A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x R , DS(on)max VGS = 10 V
VDS > ID(on) x R , DS(on)max ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A, VGS = 10 V
VDD = 40 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N05SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
Min.
IAR
Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR
Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
50
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th) Gate Threshold Voltage
2
RDS(on) Static Drain-Source On
Resistance
ID(on) On State Drain Current
75
Electrical Characteristics - Dynamic
gfs
Forward Transconductance
25
Cies
Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr
Rise Time
(di/dt)on Turn-On Current Slope
Qg
Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf
Fall Time
tcross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD
Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
70 A
900 mJ
200 mJ
40 A
V
250 µA
1000 µA
±100 nA
4V
0.016
0.032
A
S
4100
pF
1800
pF
420
pF
190
nS
900
nS
150
A/µS
130
nC
360
nS
280
nS
600
nS
75 A
300 A
1.5 V
120
nS
0.45
µC
6.5
A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x R , DS(on)max VGS = 10 V
VDS > ID(on) x R , DS(on)max ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 20 V, ID = 40 A, VGS = 10 V
VDD = 35 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 20 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
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