IRLML2502PBF_12 Datasheet, PDF (5/8 Pages) International Rectifier – Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint

IRLML2502PbF
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
100
D = 0.50
0.20
10
0.10
0.05
P_DM
0.02
0.01
t₁
1
SINGLE PULSE
t₂
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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