IRLI3303 Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

25
20
15
10
5
0
A
25
50
75
100
125
150
175
T_C, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
V_DS
V_GS
R_G
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRLI3303
R_D
D.U.T.
V_DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
P_{D M}
Notes:
1. D uty factor D = t1 / t ₂
t1
t2
2. P eak TJ = P _{D M} x Z _thJC + T _C
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
A
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case