IRHYK57133CMSE Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)

Pre-Irradiation
IRHYK57133CMSE
2400
2000
1600
1200
800
VGS = 0V, f = 1 MHz
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
400
0
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 20A
16
12
VDS = 104V
VDS = 65V
VDS = 26V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5