IRHNJ57230SE Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

Pre-Irradiation
IRHNJ57230SE, JANSR2N7486U3
2000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
1600
C_oss = C_ds + C_gd
 C_iss
1200
C _oss
800
400
C _rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 12A}
15
 ^{VDS = 160V}
V_DS = 100V
V_DS = 40V
10
5
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^°C
10
1
 T_J = 25^°C
0.1
0.3
 ^VGS ^{= 0 V}
0.6
0.9
1.2
1.5
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100
OPERATION IN THIS AREA LIMITED BY
RDS(on)
10
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10
10ms
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5