IRHNA57160_15 Datasheet, PDF (5/8 Pages) International Rectifier – Simple Drive Requirements

Pre-Irradiation
IRHNA57160, JANSR2N7469U2
10000
8000
6000
4000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
2000
0
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 475A}
16
V_DS = 80V
V_DS = 50V
V_DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µs
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5