IRGPC50FD2 Datasheet, PDF (5/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)

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IRGPC50FD2
7000
V _GE = 0V,
f = 1MHz
C_ies = C_ge + C _gc , C_ce SHORTED
6000
C_res = C _gc
C_oes = C _ce + C _gc
5000
Cies
4000
Coes
3000
2000
Cres
1000
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
9.2
V_CC = 480V
V_GE = 15V
T_C = 25°C
9.0 I _C = 39A
8.8
8.6
8.4
8.2
0
A
10
20
30
40
50
60
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
V_CE = 480V
I_C = 39A
16
12
8
4
0
0
30
60
90
120
Q _g , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R_G = 5.0Ω
VGE = 15V
VCC = 480V
10
I C = 78A
I C = 39A
I_C = 20A
1
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_C, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-129
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