IRGP4062-EPBF Datasheet, PDF (5/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062-EPbF
1800
1600
1400
1200
1000
EOFF
800
600
EON
400
200
0
0 10 20 30 40 50 60
IC (A)
Fig. 13 - Typ. Energy Loss vs. I_C
T_J = 175°C; L = 200μH; V_CE = 400V, R_G = 10; V_GE = 15V
1600
1400
1200
1000
800
EON
EOFF
600
400
200
0
0
25
50
75
100 125
Rg ()
Fig. 15 - Typ. Energy Loss vs. R_G
T_J = 175°C; L = 200μH; V_CE = 400V, I_CE = 24A; V_GE = 15V
10000
1000
Cies
100
Coes
Cres
10
0
20
40
60
80 100
VCE (V)
Fig. 17 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
1000
tdOFF
100
tdON
tF
10
tR
1
10
20
30
40
50
IC (A)
Fig. 14 - Typ. Switching Time vs. I_C
T_J = 175°C; L = 200μH; V_CE = 400V, R_G = 10; V_GE = 15V
1000
tdOFF
100
tdON
tF
tR
10
0
25
50
75
100 125
RG ()
Fig. 16 - Typ. Switching Time vs. R_G
T_J = 175°C; L = 200μH; V_CE = 400V, I_CE = 24A; V_GE = 15V
16
14
VCES = 300V
12
VCES = 400V
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55
Q _G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. V_GE
I_CE = 24A; L = 600μH
5 www.irf.com © 2012 International Rectifier
October 10, 2012