IRGI4065PBF Datasheet, PDF (5/7 Pages) International Rectifier – PDP TRENCH IGBT

100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C _ge + Cgd, C _ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
IRGI4065PbF
25
IC = 25A
20
VCE = 240V
15
VCE = 200V
VCE = 150V
10
100
Coes
Cres
10
0
50 100 150 200 250 300
VCE, Collector-toEmitter-Voltage(V)
5
0
0 10 20 30 40 50 60 70 80
Q _G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci τi/Ri
R_2R2
τ_{2 τ2}
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.533 0.000938}
τ_{3 τ3}
1.163 0.140118
1.504 2.477
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
10
100
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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