IRG4PSH71UDPBF_15 Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PSH71UDPbF
14000
12000
10000
8000
VGE = 0V, f = 1 MHZ
Cies = C _ge + Cgc, C _ce
Cres = C _gc
Coes = Cce + Cgc
SHORTED
Cies
6000
4000
2000
Coes
Cres
0
1
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
IC = 70A
16
12
8
4
0
0
100
200
300
400
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
22
VCC = 960V
VGE = 15V
TJ = 25°C
I _C = 70A
20
18
1000
RG = 5.0Ω
VGE = 15V
VCC = 960V
100
IC = 140A
IC = 70A
10
IC = 35A
16
0
10
20
30
40
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
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1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5