IRG4PH50SPBF Datasheet, PDF (5/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

7000
6000
C_ies
5000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
4000
C_oes
3000
2000 ^Cres
1000
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH50SPbF
20 _{VCC = 400V}
I _C = 33A
15
10
5
0
0 25 50 75 100 125 150 175
Q_G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25.0 _{VCC = 960V}
V_GE = 15V
T_J = 25 ^°C
I_C = 33A
24.0
23.0
22.0
1000 _{RG = 15O5ΩhΩm}
V_GE = 15V
V_CC = 960V
100
10
I_C = 66A
I_C = 33A
I_C = 16.5A
21.0
0
10
20
30
40
50
R^R_GG, G^, a^Gte^atR^ee^Rsi^es^sta^isn^tc^aeⁿ(^ceΩ^(O) ^hm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5