IRG4PH40UPBF Datasheet, PDF (5/9 Pages) International Rectifier – Ultra Fast Speed IGBT

4000
3000
2000
 ^{VGE = 0V, f = 1MHz}
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
 C_ies
1000
0
1
C _oes
C _res
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40UPbF
 20
V_CC = 400V
I _C = 21A
16
12
8
4
0
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
 5.0 VCC = 960V
V_GE = 15V
T_J = 25 ^° C
4.8 ^IC ^{= 21A}
4.6
4.4
4.2
4.0
0
10
20
30
40
50
R_GR_G, G, aGtaeteRReseissistatannccee((OΩhm) )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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 100 RG =1O0hΩm
V_GE = 15V
V_CC = 960V
10
1
 I_C = 42 A
 I_C = 21 A
 I_C =10.5 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5