IRG4PC50FDPBF Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

8000
6000
V_GE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
C _ies
4000
Coes
2000
Cres
0
A
1
10
100
V_CE, Collector-to-Emitter Voltage (V)
IRG4PC50FDPbF
20
V_CE = 400V
IC = 39A
16
12
8
4
0
A
0
40
80
120
160
200
Q_g , To tal G a te C ha rge (n C )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.00
V_CC = 480V
V _GE = 15V
T J = 25°C
I C = 39A
4.50
4.00
3.50
0
A
10
20
30
40
50
60
R _G , G ate R esistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100
R _G = 5.0 Ω
V _GE = 15V
V _CC = 480V
I_C = 78A
10
I_C = 39A
I_C = 20A
1
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
T_J , Junction Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5