IRG4IBC20UDPBF Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

1000
V_GE = 0V,
f = 1MHz
C_ies = C_ge + C _gc , C_ce SHORTED
C_res = C _gc
800
C_oes = C _ce + C _gc
C_ies
600
C_oes
400
C_res
200
0
A
1
10
100
V_CE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4IBC20UDPbF
20
VCE = 400V
IC = 6.5A
16
12
8
4
0
A
0
5
10
15
20
25
30
Q_g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32
V_CC = 480V
V_GE = 15V
TJ = 25°C
I C = 6.5A
0.31
0.30
0.29
0
A
10
20
30
40
50
60
R _G, Gate Resistance (Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
R_G = 50Ω
V_GE = 15V
V_CC = 480V
I_C = 13A
1
I_C = 6.5A
I_C = 3.3A
0.1
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5