IRG4BC20KDPBF_15 Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE

800
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
600
C_ies
400
200
0
1
C_oes
C_res
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8 _{VCC = 480V}
V_GE = 15V
T_J = 25 ^° C
I_C = 9.0A
0.7
0.6
IRG4BC20KDPbF
20 _{VCC = 400V}
I _C = 9.0A
16
12
8
4
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 _{RG 5=0OΩhm}
V_GE = 15V
V_CC = 480V
I_C = 18A
1
I_C = ^9.09^AA
I_C = 4.5A
0.5
0
10
20
30
40
50
R_RGG ,_, G_Ga_att_ee _RR_ee_ss_isis_tata_nn_cc_ee₍ (_ΩO₎hm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5