IRG4BC15UDPBF_15 Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

800
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
600
C_ies
400
C_oes
200
C_res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC15UDPbF
20 _{VCC = 400V}
I _C = 7.8A
16
12
8
4
0
0
5
10
15
20
25
Q_G, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.48
VCC= 480V
VGE = 15V
TJ = 25°C
I _C = 7.8A
0.46
0.44
10
RG = 75Ω
VGE = 15V
VCC= 480V
1
IC = 14A
IC = 7.8A
IC = 3.9A
0.42
0
10
20
30
40
50
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature