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IRFR4105Z Datasheet, PDF (5/11 Pages) International Rectifier – Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) | |||
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IRFR/U4105Z
30
25
20
15
10
5
0
25
50
75
100 125 150 175
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
ID = 18A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
ÏJ ÏJ
Ï1 Ï1
R1R1
Ci= Ïi/Ri
Ci i/Ri
R2R2
Ï2 Ï2
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) Ïi (sec)
ÏCÏ 1.100 0.000174
Ï3 Ï3
1.601 0.000552
0.418 0.007193
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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