IRFPS38N60LPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS38N60LPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
40
35
30
25
20
15
10
5
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current vs.
Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 11a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 11b. Switching Time Waveforms
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