IRFI4227PBF_15 Datasheet, PDF (5/8 Pages) International Rectifier – Advanced Process Technology

0.16
ID = 17A
0.12
0.08
TJ = 125°C
0.04
0.00
5
TJ = 25°C
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
10
IRFI4227PbF
240
ID
200
TOP
2.5A
3.0A
BOTTOM 16A
160
120
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
80
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
60
Square Pulse
40
20
0
25
50
75
100
125
150
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.44978 0.000177}
τ_{3 τ3}
0.9085 0.105329
1.3717 2.0127
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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