IRFB5620PBF Datasheet, PDF (5/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRFB5620PbF
0.5
ID = 15A
0.4
0.3
0.2
TJ = 125°C
0.1
TJ = 25°C
0
4
6
8
10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
100
Duty Cycle = Single Pulse
10
0.01
500
450
ID
TOP
2.05A
400
2.94A
350
BOTTOM 15A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
120
(For further info, see AN-1005 at www.irf.com)
TOP
Single Pulse
1. Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
Purely a thermal phenomenon and failure occurs at a
100
ID = 15A
temperature far in excess of T_jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
80
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
60
4. P_{D (ave)} = Average power dissipation per single
avalanche pulse.
40
5. B_V = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
6. I_av = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
T_jmax (assumed as 25°C in Figure 14, 15).
t_{av =} Average time in avalanche.
D = Duty cycle in avalanche = t_av ·f
Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC
I_av = 2DT/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
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