IRFB4332PBF_15 Datasheet, PDF (5/8 Pages) International Rectifier – Advanced Process Technology

0.40
ID = 35A
0.30
0.20
0.10
0.00
5
TJ = 125°C
TJ = 25°C
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.0
ID = 250μA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFB4332PbF
1000
800
ID
TOP
8.3A
13A
BOTTOM 35A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
180
ton= 1μs
160
Duty cycle = 0.25
Half Sine Wave
140
Square Pulse
120
100
80
60
40
20
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= τi/Ri
R_2R2
τ_{2 τ2}
R _{3R 3}
Ri (°C/W) τι (sec)
τ_{Cτ 0.077468 0.000097}
τ_{3 τ3}
0.169886 0.001689
0.13319 0.012629
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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