IRF9410PBF_15 Datasheet, PDF (5/7 Pages) International Rectifier – GENERATION V TECHNOLOGY

IRF9410PbF
1000
800
600
400
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
Coss
200
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 2.0A
16
V_DS = 15V
12
8
4
0
0
6
12
18
24
30
Q_G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
10 ^0.20
0.10
0.05
0.02
1
0.01
P_DM
t1
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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