IRF8915 Datasheet, PDF (5/10 Pages) International Rectifier – HEXFETPower MOSFET

IRF8915
9
8
7
6
5
4
3
2
1
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
3.0
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
τ_Cτ
Ri (°C/W)
3.68799
2.18971
τi (sec)
0.000349
0.005246
τ_{3 τ3}
τ_{4 τ4}
34.7298 0.470610
21.8971 13.52000
P DM
t1
t2
Notes:
1. Duty factor D =
t 1/ t 2
2. Peak T J = P DM x Z thJA
+T A
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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