|
IRF7853PBF Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
|
◁ |
IRF7853PbF
10
8
6
4
2
0
25
50
75
100
125
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ⤠1 µs
Duty Factor ⤠0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
150
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
ÏJ ÏJ
Ï1 Ï1
R1R1
Ci= Ïi/Ri
Ci Ïi/Ri
R2R2
Ï2 Ï2
R3R3 Ri (°C/W) Ïi (sec)
ÏACÏ 7.016 0.00474
Ï3 Ï3
26.95 0.04705
16.04 2.3619
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
|
▷ |