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IRF7842 Datasheet, PDF (5/9 Pages) International Rectifier – Power MOSFET(Vdss = 40 V) | |||
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IRF7842
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
2.4
2.0
ID = 250µA
1.6
1.2
0.8
0.4
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
ÏJ ÏJ
Ï1 Ï1
R1R1
Ci= Ïi/Ri
Ci Ïi/Ri
R2R2
Ï2 Ï2
R3R3 Ri (°C/W) Ïi (sec)
ÏCÏ 10.48 0.138167
Ï3 Ï3
26.83 1.8582
12.69 44.8
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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