IRF7834PBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7834PbF
20
2.2
16
1.8
12
ID = 250µA
8
1.4
4
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
0.01
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R_4R4
τ_Cτ
Ri (°C/W)
1.1659
9.9439
τi (sec)
0.000184
0.153919
τ_{4 τ4}
25.520 1.7486
13.380 49
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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