IRF7501TRPBF Datasheet, PDF (5/9 Pages) International Rectifier – Generation V Technology

IRF7501PbF
500
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
400
C_oss = C_ds + C _gd
Ciss
300
Coss
200
Crss
100
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I _D = 1.7A
V_DS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
Q_G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10
0.10
0.05
P_DM
0.02
0.01
t₁
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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