IRF7311TR Datasheet, PDF (5/7 Pages) International Rectifier – Generation V Technology

IRF7311
1600
1200
C iss
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SH OR TE D
C _rss = C _gd
C _oss = C _ds + C _gd
C oss
800
Crss
400
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 6.0A
8
V_DS = 10V
6
4
2
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 _0.01
P_DM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient