IRF6726MPBF Datasheet, PDF (5/9 Pages) International Rectifier – DirectFET Power MOSFET

1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
IRF6726MPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10
1
10msec
DC
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
2.5
2.0
1.5 ^{ID = 100µA}
ID = 150µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.7A
3.9A
BOTTOM 25A
600
400
200
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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