IRF6712SPBF Datasheet, PDF (5/9 Pages) International Rectifier – DirectFET Power MOSFET

1000
VGS = 0V
100
IRF6712SPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
TJ = 150°C
TJ = 25°C
1
TJ = -40°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
50
40
10
10msec
1msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
2.5
2.0
ID = 50µA
ID = 100µA
1.5 ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 3.8A
5.4A
BOTTOM 13A
30
20
10
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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