IRF6665PBF Datasheet, PDF (5/10 Pages) International Rectifier – Latest MOSFET Silicon technology

200
180
ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
TJ = 25°C
20
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 15b. Unclamped Inductive Waveforms
R_D
V_DS
V_GS
R_G
D.U.T.
+
-
V_DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 16a. Switching Time Test Circuit
www.irf.com
IRF6665PbF
120
100
TJ = 125°C
80
60
TJ = 25°C
Vgs = 10V
40
0
2
4
6
8
10
ID, Drain Current (A)
Fig 13. On-Resistance vs. Drain Current
50
ID
TOP
0.86A
40
1.3A
BOTTOM 5.0A
30
20
10
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 16b. Switching Time Waveforms
5