IRF6637PBF Datasheet, PDF (5/10 Pages) International Rectifier – DirectFET

Power MOSFET

1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
160
120
IRF6637PbF
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
1msec
10
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.10
1.00
10msec
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ, Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
4.9A
7.5A
BOTTOM 11A
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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