IR2152 Datasheet, PDF (5/6 Pages) International Rectifier – SELF-OSCILLATING HALF-BRIDGE DRIVER

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IR2152
HVDCMOS 4.0 µm
231
68 X 101 X 26 (mil)
Thickness of Gate Oxide
Connections
First
Layer
Second
Layer
Contact Hole Dimension
Insulation Layer
Passivation
Method of Saw
Method of Die Bond
Wire Bond
Leadframe
Package
Remarks:
Material
Width
Spacing
Thickness
Material
Width
Spacing
Thickness
Material
Thickness
Material
Thickness
Method
Material
Material
Die Area
Lead Plating
Types
Materials
800Å
Poly Silicon
5 µm
6 µm
5000Å
Al - Si - Cu (Si: 1.0%, Cu: 0.5%)
6 µm
9 µm
20,000Å
5 µm X 5 µm
PSG (SiO₂)
1.7 µm
PSG (SiO₂)
1.7 µm
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
8 Lead PDIP / SO-8
EME6300 / MP150 / MP190
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-197