AUIRLS3034 Datasheet, PDF (5/12 Pages) International Rectifier – HEXFETPower MOSFET

10000
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
Limited By Package
300
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
www.irf.com
AUIRLS3034
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
LIMITED BY PACKAGE
10
10msec
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 38.9A
65.3A
BOTTOM 195A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5