SI4420DYPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET

Power MOSFET

Si4420DYPbF
4000
3000
2000
1000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 12.5A}
16
V_DS = 24V
V_DS = 15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 25° C
T_J = 150° C
10
V_GS = 0 V
1
0.0
1.0
2.0
3.0
4.0
5.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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