IRLR3103TR Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET® Power MOSFET

IRLR/U3103
3200
2800
2400
C _{is s}
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
C _oss = C_ds + C _gd
2000
C oss
1600
1200
800
C rss
400
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
I_D = 34A
12
V_DS = 24V
V_DS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
60
70
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175°C
T_J = 25°C
10
0.4
VGS = 0V _A
0.8
1.2
1.6
2.0
2.4
2.8
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
100
100µs
1ms
10
10ms
T_C = 25°C
T_J = 175°C
S ingle P ulse
1
1
10
A
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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